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| Amplifier, Power, 1 W 2-18 GHz Features 1 Watt Saturated Output Power Level Variable Drain Voltage (6-10V) Operation (R) MSAG Process MAAPGM0080-DIE Rev Preliminary Datasheet Description The MAAPGM0080-DIE is a 2-stage 1 W distributed power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Electronic Warfare Ultra Wideband (UWB) Test Instrumentation Also Available in: Description Part Number Plastic MAAP-000080-PKG003 Sample Board (Die) MAAP-000080-SMB004 SAMPLES Mechanical Sample (Die) MAAP-000080-MCH000 Electrical Characteristics: TB = 10C1, Z0 = 50, VDD = 10V, IDQ = 750mA2, Pin = 22 dBm, RG = 130 Parameter Bandwidth Output Power 1-dB Compression Point Small Signal Gain Power Added Efficiency Input VSWR Output VSWR Gate Current Drain Current 1. 2. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Symbol f POUT P1dB G PAE VSWR VSWR IGG IDD Typical 2.0-18.0 30 29.5 11.5 11 1.5:1 1.8:1 5 800 Units GHz dBm dBm dB % mA mA TB = MMIC Base Temperature Adjust VGG between -2.6 and -1.2V to achieve specified Idq. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1 W 2-18 GHz Maximum Ratings3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 27.0 +12.0 -3.0 0.78 7.8 170 -55 to +150 MAAPGM0080-DIE Rev Preliminary Datasheet Units dBm V V A W C C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Drain Voltage Gate Voltage Input Power Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN JC TB Min 6.0 -2.6 Typ 10.0 -2.0 22.0 13.1 Note 5 Max 10.0 -1.2 25.0 Unit V V dBm C/W C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170C -- JC* VDD * IDQ Power Derating Curve, Quiescent (No RF) 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10.0 V. 3. Adjust VGG to set IDQ, (approximately @ -2.0 V). 4. Set RF input. Peak Power Dissipation (W) MMIC Base Temperature (C) 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1 W 2-18 GHz MAAPGM0080-DIE Rev Preliminary Datasheet All Data is at 10C MMIC base temperature, CW stimulus, unless otherwise noted. 35 33 31 29 35 33 31 29 Pout (dBm) 25 23 21 19 17 15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 6V 8V 10V P1dB (dBm) 27 27 25 23 21 19 17 15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 6V 8V 10V Frequency (GHz) Frequency (GHz) Figure 1. Output Power and Power Added Efficiency at Pin = 22dBm, and IDSQ=740mA 35 33 31 29 Figure 2. 1dB Compression Point and Drain Voltage at IDSQ=750mA 35 33 31 29 Psat (dBm) Psat (dBm) 27 25 23 21 19 17 15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 6V 8V 10V 27 25 23 21 19 17 15 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 -20C 50C 120C Frequency (GHz) Frequency (GHz) Figure 3. Saturated Output Power vs. Frequency and Drain Voltage Figure 4. Saturated Output Power vs. Frequency and Temperature at VD=10V and IDSQ=750mA. 6 35 33 1.8 31 2.0 20 18 16 14 12 10 8 6 4 2 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 6V 8V 10V Input VSWR Output VSWR Output Power (dBm), SSG(dB), PAE (%) 5 29 27 25 23 21 1.6 Gain (dB) 4 1.2 1.0 0.8 0.6 0.4 0.2 19 17 15 13 11 9 7 3 2 1 5 0 10 20 30 40 50 60 70 80 90 100 110 0.0 120 Frequency (GHz) Junction Temperature (C) Figure 5. Small Signal Gain and Input and Output VSWR at IDSQ=750mA. Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 10V, 10GHz, and 750mA. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Drain Current (A) Pout SSG PAE IDS 1.4 VSWR Amplifier, Power, 1 W 2-18 GHz MAAPGM0080-DIE Rev Preliminary Datasheet All Data is at 10C MMIC base temperature, CW stimulus, unless otherwise noted. 40 38 18 36 34 32 16 14 30 20 Output Power (dBm) 26 24 22 20 18 16 14 12 10 0 2 4 6 8 10 12 14 16 18 20 22 24 2 GHz 8 GHz 12 GHz 18 GHz Gain (dB) 28 12 10 8 6 4 2 0 10 12 14 16 18 20 22 24 26 28 30 32 2 GHz 12 GHz 18 GHz Input Power (dBm) Figure 7. Output Power vs. Input Power and Frequency at 10V and 750mA 2.0 20 1.8 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 2 GHz 8 GHz 12 GHz 18 GHz 1.6 1.4 Output Power (dBm) Figure 8. Gain vs. Output Power and Frequency at 10V and 750mA. Drain Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 PAE (%) 2 GHz 8 GHz 12 GHz 18 GHz Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and IDSQ=750mA. 40 38 36 34 32 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 10 12 14 16 18 2 GHz 12 GHz 18 GHz 20 Input Power (dBm) Figure 10. Drain Current vs. Input Power and Frequency at 10V and 750mA. Output Power (dBm) 30 26 24 22 20 18 16 14 12 10 2 GHz 8 GHz 12 GHz 18 GHz Gain (dB) 28 20 22 24 26 28 30 32 Input Power (dBm) Figure 11. Output Power vs. Input Power and Frequency at 8V and 750mA. Output Power (dBm) Figure 12. Gain vs. Output Power and Frequency at 8V and 750mA. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1 W 2-18 GHz 2.0 20 1.8 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 2 GHz 8 GHz 12 GHz 18 GHz 1.6 1.4 MAAPGM0080-DIE Rev Preliminary Datasheet All Data is at 10C MMIC base temperature, CW stimulus, unless otherwise noted. Drain Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 2 GHz 8 GHz 12 GHz 18 GHz PAE (%) Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and IDSQ=750mA. Input Power (dBm) Figure 14. Drain Current vs. Input Power and Frequency at 8V and 750mA 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1 W 2-18 GHz Mechanical Information Chip Size: 3.150 x 3.150 x 0.075 mm (124 x 124 x 3 mils) 76.46 VDD MAAPGM0080-DIE Rev Preliminary Datasheet 124.02 84.96 OUT 24.63 IN 0.00 75.83 VGG 0.00 124.02 Size (mils) 4x8 8x6 6x6 Chip edge to bond pad dimensions are shown to the center of the bond pad (mils). Figure 1. Die Layout Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 200 200 x 150 150 x 150 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 1 W 2-18 GHz Assembly and Bonding Diagram VDD 0.1 F MAAPGM0080-DIE Rev Preliminary Datasheet 100 pF RFOUT RFIN 100 pF VGG 0.1 F 130 Figure 2. Recommended operational configuration. Wire bond as shown. Assembly Instructions: Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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